PHOTO-LUMINESCENCE INVESTIGATIONS OF DIFFUSED GAAS LIGHT-EMITTING DIODES

被引：2

作者：

REICHL, H ^{[1
]}

HUBER, D ^{[1
]}

MULLER, J ^{[1
]}

机构：

[1] AEG TELEFUNKEN,D-7100 HEILBRONN,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 47卷 / 02期

关键词：

D O I：

10.1002/pssa.2210470219

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：489 / 495

页数：7

共 15 条

[1] ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE [J].

ACKET, GA ;

NIJMAN, W ;

LAM, HT .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3033-3040

[2] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

CASEY, HC ;

MILLER, BI ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287

[3] RADIATIVE LIFETIME IN GAAS1-X PX P-N-JUNCTIONS [J].

EDMONDS, HD ;

SMITH, AW .

APPLIED PHYSICS LETTERS, 1973, 23 (07) :382-384

[4] THEORY OF LUMINESCENT EFFICIENCY OF TERNARY SEMICONDUCTORS [J].

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4981-&

[5]

HARTH W, 1976, IEEE T ELECTRON DEVI, P478

[6] DOPING DEPENDENCE OF HOLE LIFETIME IN TYPE GAAS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4408-&

[7] GEOMETRICAL PROPERTIES OF RANDOM PARTICLES AND EXTRACTION OF PHOTONS FROM ELECTROLUMINESCENT DIODES [J].

JOYCE, WB ;

BACHRACH, RZ ;

DIXON, RW ;

SEALER, DA .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) :2229-2253

[8] OPTICAL CHARACTERIZATION OF GAAS LAYERS GROWN ON GE SUBSTRATES [J].

KASANO, H ;

HOSOKI, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (01) :112-118

[9] DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E ) [J].

KONNERTH, K ;

LANZA, C .

APPLIED PHYSICS LETTERS, 1964, 4 (07) :120-&

[10] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS - GE PREPARED BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

ETTENBERG, M .

APPLIED PHYSICS LETTERS, 1973, 23 (09) :511-513

← 1 2 →