RADIATIVE LIFETIME IN GAAS1-X PX P-N-JUNCTIONS

被引:20
作者
EDMONDS, HD
SMITH, AW
机构
[1] IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
[2] IBM CORP,RES DIV,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.1654927
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:382 / 384
页数:3
相关论文
共 4 条
[1]   STUDIES OF PHOTOLUMINESCENCE IN GAAS1-XPX MIXED CRYSTALS [J].
GAJ, JA ;
MAJERFELD, A ;
PEARSON, GL .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 48 (02) :513-+
[2]  
KISHIMO S, 1973, J ELECTROCHEM SOC, V119, P617
[3]  
LORENZ MR, 1973, 1972 S P I PHYS LOND
[4]   OPTICAL PHASE SHIFT MEASUREMENT OF RESIDUAL DEFECTS IN VAPOR EPITAXIAL GAASP [J].
ZWICKER, HR ;
SCIFRES, DR ;
HOLONYAK, N ;
DUPUIS, RD ;
BURNHAM, RD ;
BURD, JW ;
ALFEROV, ZI .
SOLID STATE COMMUNICATIONS, 1971, 9 (09) :587-&