INITIAL-STAGES OF HETEROJUNCTION FORMATION - SI ON GAAS(100)

被引:17
作者
PALOMARES, FJ
MENDEZ, MA
CUBERES, MT
SORIA, F
机构
[1] Instituto de Ciencia de Materiales (CSIC), 28006 Madrid
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 03期
关键词
D O I
10.1116/1.577552
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Si/GaAs(100) interfaces grown at 300, 600, and 770 K on c(8 X 2)-Ga surfaces prepared by simultaneous argon bombardment at 600 V and annealing cycles at temperatures lower than 800 K have been studied by Auger electron spectroscopy and low-energy electron diffraction (LEED). Si deposition at room temperature up to 8 monolayers (ML) results in disordered Si surfaces. At 600 K the first 2 Si ML grow pseudomorphically to the substrate with the formation of an ordered 1 X 1 structure at about 0.75 ML. At 770 K Si follows a Stranski-Krastanov mechanism. Up to 0.25 Si ML a (4X2) structure, never reported before, is detected. From 0.25 to 0.75 ML a (1X2) pattern develops which coexists with (2X1) domains above 0.75 ML. This alternation of domains indicates Si dimerization in two orthogonal surface directions. At about 1 ML the (1X2) and (2X1) structures have equal intensities. Above 1.25 ML streaks features appear following the Bragg spot directions. This LEED pattern can be seen even at coverages greater than 4 ML, though with an increasing diffuse background.
引用
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页码:939 / 943
页数:5
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