AB-INITIO CALCULATION OF THE BAND-OFFSET AT STRAINED GAAS/INAS(001) HETEROJUNCTIONS

被引：42

作者：

TIT, N

PERESSI, M

BARONI, S

机构：

[1] UNIV TRIESTE,DIPARTIMENTO FIS TEOR,I-34014 TRIESTE,ITALY

[2] SCUOLA INT SUPER STUDI AVANZATI,I-34014 TRIESTE,ITALY

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.48.17607

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a self-consistent pseudopotential calculation of the valence-band offset at the GaAs/InAs (001) strained interface which is chosen as an example of isovalent, common-anion, lattice-mismatched heterojunctions. Our results show that the valence-band offset can be tuned by about 0.5 eV going from GaAs to InAs substrates, mainly due to the different effect of strain on the topmost valence-band state of the two bulk materials.

引用

页码：17607 / 17610

页数：4

共 16 条

[1]

BARONI S, 1993, 21ST P INT C PHYS SE, P689

[2]

Capasso F., 1987, HETEROJUNCTION BAND

[3] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[4] VALENCE-BAND OFFSETS AT STRAINED SI/GE INTERFACES [J].

COLOMBO, L ;

RESTA, R ;

BARONI, S .

PHYSICAL REVIEW B, 1991, 44 (11) :5572-5579

[5] NORM-CONSERVING PSEUDOPOTENTIALS [J].

HAMANN, DR ;

SCHLUTER, M ;

CHIANG, C .

PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1494-1497

[6] STRAIN EFFECT ON BAND OFFSETS AT PSEUDOMORPHIC INAS/GAAS HETEROINTERFACES CHARACTERIZED BY X-RAY PHOTOEMISSION SPECTROSCOPY [J].

HIRAKAWA, K ;

HASHIMOTO, Y ;

HARADA, K ;

IKOMA, T .

PHYSICAL REVIEW B, 1991, 44 (04) :1734-1740

[7] DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J].

KOWALCZYK, SP ;

SCHAFFER, WJ ;

KRAUT, EA ;

GRANT, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :705-708

[8] THEORY OF SEMICONDUCTOR HETEROJUNCTIONS - THE ROLE OF QUANTUM DIPOLES - COMMENT [J].

MARGARITONDO, G .

PHYSICAL REVIEW B, 1985, 31 (04) :2526-2527

[9] LARGE VALENCE-BAND OFFSET IN STRAINED-LAYER INXGA1-XAS-GAAS QUANTUM-WELLS [J].

MENENDEZ, J ;

PINCZUK, A ;

WERDER, DJ ;

SPUTZ, SK ;

MILLER, RC ;

SIVCO, DL ;

CHO, AY .

PHYSICAL REVIEW B, 1987, 36 (15) :8165-8168

[10]

MONKHORST HJ, 1976, PHYS REV B, V13, P5188, DOI [10.1103/PhysRevB.13.5188, 10.1103/PhysRevB.16.1746]

← 1 2 →