THEORY OF SEMICONDUCTOR HETEROJUNCTIONS - THE ROLE OF QUANTUM DIPOLES - COMMENT

被引：45

作者：

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.31.2526

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：2526 / 2527

页数：2

相关论文

共 16 条

[1] ADAM MJ, 1969, SOLID STATE ELECTRON, V22, P783
[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[3] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES
CHIARADIA, P
KATNANI, AD
SANG, HW
BAUER, RS
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (14) : 1246 - 1249
[4] CHIARADIA P, COMMUNICATION
[5] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION
FRENSLEY, WR
KROEMER, H
[J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2642 - 2652
[6] ELEMENTARY THEORY OF HETEROJUNCTIONS
HARRISON, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021
[7] EMPIRICAL RULE TO PREDICT HETEROJUNCTION BAND DISCONTINUITIES
KATNANI, AD
MARGARITONDO, G
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2522 - 2525
[8] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1944 - 1956
[9] KELLY M, UNPUB
[10] KROEMER H, 1983 P NATO ADV STUD