INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES

被引：51

作者：

CHIARADIA, P

KATNANI, AD

SANG, HW

BAUER, RS

机构：

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 52卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.52.1246

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1246 / 1249

页数：4

共 24 条

[1] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].

BACHRACH, RZ ;

BAUER, RS ;

CHIARADIA, P ;

HANSSON, GV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :335-343

[2] SURFACE PHASES OF GAAS(100) AND ALAS(100) [J].

BACHRACH, RZ ;

BAUER, RS ;

CHIARADIA, P ;

HANSSON, GV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :797-801

[3] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J].

BARAFF, GA ;

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1977, 38 (05) :237-240

[4] INTERFACES OF SEMICONDUCTING MOLECULAR-BEAM EPITAXIAL-FILMS [J].

BAUER, RS .

THIN SOLID FILMS, 1982, 89 (04) :419-432

[5]

FRENSLEY WR, 1977, PHYS REV B, V15, P2642

[6] ELEMENTARY THEORY OF HETEROJUNCTIONS [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021

[7] EMPIRICAL RULE TO PREDICT HETEROJUNCTION BAND DISCONTINUITIES [J].

KATNANI, AD ;

MARGARITONDO, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2522-2525

[8] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J].

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW B, 1983, 28 (04) :1944-1956

[9] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF HETEROJUNCTIONS [J].

KATNANI, AD ;

MARGARITONDO, G ;

ALLEN, RE ;

DOW, JD .

SOLID STATE COMMUNICATIONS, 1982, 44 (08) :1231-1234

[10] BAND DISCONTINUITIES AND INTERFACE FERMI-LEVEL POSITIONS IN GE-GAAS(110) HETEROJUNCTIONS [J].

KOWALCZYK, SP ;

GRANT, RW ;

WALDROP, JR ;

KRAUT, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :684-686

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