TRANSIENT PHENOMENA AND THEIR EFFECT ON INSULATOR BARRIER IN AL-(AL OXIDE)-AL STRUCTURES - T=300 DEGREES K

被引：11

作者：

KADLEC, J ^{[1
]}

GUNDLACH, KH ^{[1
]}

机构：

[1] MAX PLANCK INST PHYS & ASTROPHYS,ABT NUMER RECHENMASCHIN,FOHRINGER RING 6,MUNICH 40,EAST GERMANY

来源：

THIN SOLID FILMS | 1974年 / 20卷 / 02期

关键词：

D O I：

10.1016/0040-6090(74)90064-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：287 / 296

页数：10

共 9 条

[1] TUNNELING THROUGH THIN INSULATING LAYERS [J].

FISHER, JC ;

GIAEVER, I .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (02) :172-&

[2] ELECTRON TRANSFER PROCESSES TRHOUGH TANTALUM-TANTALUM-OXIDE DIODES [J].

FLANNERY, WE ;

POLLACK, SR .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (12) :4417-&

[3]

GUNDLACH KH, 1966, Z ANGEW PHYSIK, V21, P468

[4]

HILL AD, TO BE PUBLISHED

[5] TRANSIENT PHENOMENA AND THEIR EFFECT ON INSULATOR BARRIER IN AL-(AL-OXIDE)-AL STRUCTURES - T = 100 DEGREES K [J].

KADLEC, J ;

GUNDLACH, KH .

THIN SOLID FILMS, 1972, 11 (02) :423-&

[6] ELECTRON TUNNELING THROUGH ASYMMETRIC FILMS OF THERMALLY GROWN AL2O3 [J].

POLLACK, SR ;

MORRIS, CE .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) :1503-&

[7]

POLLACK SR, 1965, T METALL SOC AIME, V233, P497

[8] ENHANCED TUNNELING THROUGH DIELECTRIC FILMS DUE TO IONIC DEFECTS [J].

SCHMIDLIN, FW .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2823-+

[9] VOLT-CURRENT CHARACTERISTICS FOR TUNNELING THROUGH INSULATING FILMS [J].

STRATTON, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (SEP) :1177-&

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