LONG-WAVELENGTH PINFET RECEIVER OEIC ON A GAAS-ON-INP HETEROSTRUCTURE

被引：49

作者：

SUZUKI, A ^{[1
]}

ITOH, T ^{[1
]}

TERAKADO, T ^{[1
]}

KASAHARA, K ^{[1
]}

ASANO, K ^{[1
]}

INOMOTO, Y ^{[1
]}

ISHIHARA, H ^{[1
]}

TORIKAI, T ^{[1
]}

FUJITA, S ^{[1
]}

机构：

[1] NEC CORP,MICROELECTR RES LAB,KAWASAKI,KANAGAWA 213,JAPAN

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 18期

关键词：

D O I：

10.1049/el:19870671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：954 / 955

页数：2

相关论文

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[4] ITOH T, 1986, DEC IEDM, P771
[5] PLANAR MONOLITHIC INTEGRATED PHOTORECEIVER FOR 1.3-1.55 MU-M WAVELENGTH APPLICATIONS USING GALNAS-GAAS HETEROEPITAXIES
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