AMORPHOUS-SEMICONDUCTOR DEVICES

[1] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[2] MOTT NF, 1971, ELECTRONIC PROCESSES

[3] AMORPHOUS SEMICONDUCTORS FOR SWITCHING, MEMORY, AND IMAGING APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (02) : 91 - 105

[4] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1968, 21 (20) : 1450 - +

[5] LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (24) : 1469 - 1472

[6] STATE OF AMORPHOUS THRESHOLD SWITCHES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) : 256 - 263

[1] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[2] MOTT NF, 1971, ELECTRONIC PROCESSES

[3] AMORPHOUS SEMICONDUCTORS FOR SWITCHING, MEMORY, AND IMAGING APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (02) : 91 - 105

[4] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1968, 21 (20) : 1450 - +

[5] LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (24) : 1469 - 1472

[6] STATE OF AMORPHOUS THRESHOLD SWITCHES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) : 256 - 263