STATE OF AMORPHOUS THRESHOLD SWITCHES

[1] SWITCHING PHENOMENA IN THIN-FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 728 - 738

[2] ADLER D, UNPUBLISHED

[3] ADLER D, 1974, AMORPHOUS LIQUID SEM, V2, P859

[4] ADLER D, 1974, AMORPHOUS LIQUID SEM, P1407

[5] Alder David, 1972, J NON-CRYST SOLIDS, V8-10, P538

[6] OBSERVATION OF CURRENT FILAMENTS IN SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 341 - &

[7] Berglund C. N., 1970, IEEE T ELECTRON DEV, V17, P137

[8] PRESWITCHING ELECTRICAL PROPERTIES, FORMING, AND SWITCHING IN AMORPHOUS CHALCOGENIDE ALLOY THRESHOLD AND MEMORY DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (11) : 1261 - &

[9] ELECTRICAL CHARACTERISTICS AND THRESHOLD SWITCHING IN AMORPHOUS-SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (02) : 127 - &

[10] NEGATIVE-RESISTANCE INDUCED BY AVALANCHE INJECTION IN BULK SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (09) : 578 - 586

[1] SWITCHING PHENOMENA IN THIN-FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 728 - 738

[2] ADLER D, UNPUBLISHED

[3] ADLER D, 1974, AMORPHOUS LIQUID SEM, V2, P859

[4] ADLER D, 1974, AMORPHOUS LIQUID SEM, P1407

[5] Alder David, 1972, J NON-CRYST SOLIDS, V8-10, P538

[6] OBSERVATION OF CURRENT FILAMENTS IN SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 341 - &

[7] Berglund C. N., 1970, IEEE T ELECTRON DEV, V17, P137

[8] PRESWITCHING ELECTRICAL PROPERTIES, FORMING, AND SWITCHING IN AMORPHOUS CHALCOGENIDE ALLOY THRESHOLD AND MEMORY DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (11) : 1261 - &

[9] ELECTRICAL CHARACTERISTICS AND THRESHOLD SWITCHING IN AMORPHOUS-SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (02) : 127 - &

[10] NEGATIVE-RESISTANCE INDUCED BY AVALANCHE INJECTION IN BULK SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (09) : 578 - 586