PRESWITCHING ELECTRICAL PROPERTIES, FORMING, AND SWITCHING IN AMORPHOUS CHALCOGENIDE ALLOY THRESHOLD AND MEMORY DEVICES

被引：72

作者：

BOSNELL, JR

THOMAS, CB

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(72)90047-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1261 / &

共 15 条

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