AC ELECTRICAL BREAKDOWN IN THIN SILICON OXIDE FILMS

被引:46
作者
KLEIN, N
LEVANON, N
机构
关键词
D O I
10.1063/1.1710201
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3721 / +
页数:1
相关论文
共 7 条
[1]   EXTENDED TEMPERATURE RANGE FOR MAXIMUM DIELECTRIC STRENGTH [J].
KLEIN, N ;
LISAK, Z .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (07) :979-+
[2]   MAXIMUM DIELECTRIC STRENGTH OF THIN SILICON OXIDE FILMS [J].
KLEIN, N ;
GAFNI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :281-+
[3]  
KLEIN N, 1965, P S PHYS FAILURE ELE, V3, P315
[4]  
SCHIBLI E, 1966, Patent No. 3249835
[5]  
WATSON GN, 1952, TREATISE THEORY BESS, P329
[6]  
WATSON GN, 1952, TREATISE THEORY BESS, P79
[7]  
1946, J MATH PHYS, V75, P752