CONDUCTION AND SWITCHING IN NON-CRYSTALLINE MATERIALS

被引:111
作者
MOTT, NF
机构
[1] Cavendish Laboratory, Cambridge
关键词
D O I
10.1080/00107516908220104
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The mechanism by which electrons move in crystalline semiconductors is now understood in some detail. The theoretical concepts necessary for the understanding of conductions in non-crystalline materials involve new ideas, which are discussed in this article. These include ‘localized states’ and ‘thermally activated hopping’. Some experiments designed to test the theory are described. Certain switching devices which make use of the electrical properties of non-crystalline materials are described, and theoretical explanations are suggested. © Taylor and Francis Group, LLC.
引用
收藏
页码:125 / +
页数:1
相关论文
共 23 条
[1]   ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].
ANDERSON, PW .
PHYSICAL REVIEW, 1958, 109 (05) :1492-1505
[2]   AVALANCHE-INDUCED NEGATIVE RESISTANCE IN THIN OXIDE FILMS [J].
CHOPRA, KL .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :184-&
[3]   ELECTRONIC TRANSPORT IN HIGH-RESISTIVITY CERIUM SULFIDE [J].
CUTLER, M ;
LEAVY, JF .
PHYSICAL REVIEW, 1964, 133 (4A) :1153-+
[4]  
CUTLER M, IN PRESS
[6]  
FERRIER RJ, IN PRESS
[7]   IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM [J].
FRITZSCHE, H ;
CUEVAS, M .
PHYSICAL REVIEW, 1960, 119 (04) :1238-1245
[8]   PHOTOSENSITIVE TUNNELING AND SUPERCONDUCTIVITY [J].
GIAEVER, I .
PHYSICAL REVIEW LETTERS, 1968, 20 (23) :1286-&
[9]  
HALPERIN BI, 1968, ADV CHEM PHYS, V13, P123
[10]  
Kolomiets B.T., 1963, RADIOTEKHN ELEKT, V8, P2097