IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM

被引:251
作者
FRITZSCHE, H
CUEVAS, M
机构
来源
PHYSICAL REVIEW | 1960年 / 119卷 / 04期
关键词
D O I
10.1103/PhysRev.119.1238
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1238 / 1245
页数:8
相关论文
共 38 条
[1]  
ABRAHAMS E, COMMUNICATION
[2]   THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J].
AIGRAIN, P .
PHYSICA, 1954, 20 (11) :978-982
[3]  
BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355
[4]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[5]   HALL AND TRANSVERSE MAGNETORESISTANCE EFFECTS FOR WARPED BANDS AND MIXED SCATTERING [J].
BEER, AC ;
WILLARDSON, RK .
PHYSICAL REVIEW, 1958, 110 (06) :1286-1294
[6]   IMPURITY CONDUCTION IN INDIUM-DOPED GERMANIUM [J].
BLAKEMORE, JS .
PHILOSOPHICAL MAGAZINE, 1959, 4 (41) :560-576
[7]  
BUSCH G, 1946, HELV PHYS ACTA, V19, P463
[8]   ELECTRICAL PROPERTIES OF NEAR-DEGENERATE BORON-DOPED SILICON [J].
CARLSON, RO .
PHYSICAL REVIEW, 1955, 100 (04) :1075-1078
[9]   TRANSMUTATION-PRODUCED GERMANIUM SEMICONDUCTORS [J].
CLELAND, JW ;
LARKHOROVITZ, K ;
PIGG, JC .
PHYSICAL REVIEW, 1950, 78 (06) :814-815
[10]   IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J].
CONWELL, EM .
PHYSICAL REVIEW, 1956, 103 (01) :51-60