IMPURITY CONDUCTION IN INDIUM-DOPED GERMANIUM

被引：18

作者：

BLAKEMORE, JS

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1959年 / 4卷 / 41期

关键词：

D O I：

10.1080/14786435908238252

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：560 / 576

页数：17

共 18 条

[1] HALL AND TRANSVERSE MAGNETORESISTANCE EFFECTS FOR WARPED BANDS AND MIXED SCATTERING
BEER, AC
WILLARDSON, RK
[J]. PHYSICAL REVIEW, 1958, 110 (06): : 1286 - 1294
[2] BLAKEMORE JS, 1958, B AM PHYS SOC, V3, P328
[3] SCATTERING OF CARRIERS BY IONIZED IMPURITIES IN SEMICONDUCTORS
BLATT, FJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 262 - 269
[4] Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85
[5] BUSCH G, 1946, HELV PHYS ACTA, V19, P463
[6] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON
CONWELL, EM
[J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60
[7] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS
ERGINSOY, C
[J]. PHYSICAL REVIEW, 1950, 79 (06): : 1013 - 1014
[8] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES
FRITZSCHE, H
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) : 69 - 80
[9] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES
FRITZSCHE, H
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 406 - 419
[10] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES
HUNG, CS
GLIESSMAN, JR
[J]. PHYSICAL REVIEW, 1954, 96 (05): : 1226 - 1236