NONDESTRUCTIVE CHARACTERIZATION OF (GA,IN,A1,AS,P)-BASED TERNARY MULTILAYER STRUCTURES USING SPECTROSCOPIC ELLIPSOMETRY

被引：10

作者：

PICKERING, C

GARAWAL, NS

LANCEFIELD, D

PIEL, JP

BLUNT, R

机构：

[1] EPITAXIAL PROD INT LTD,CARDIFF,WALES

[2] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

[3] SOPRA,BOIS COLOMBES,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期

关键词：

Nondestructive Examination - Semiconducting Aluminum Compounds - Dielectric Properties - Semiconducting Indium Compounds - Dielectric Properties - Thickness Measurement;

D O I：

10.1016/0169-4332(91)90196-Q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Spectroscopic ellipsometry has been used to measure compositions and layer thicknesses of two-, three- and four-layer structures consisting of Al0.2Ga0.8As/GaAs and In0.53Ga0.47As/Al0.48In0.52As/InP materials. A simple procedure has been developed to obtain Al0.48In0.52As dielectric functions by scaling InP values. Very good agreement has been obtained with destructive techniques.

引用

页码：346 / 352

页数：7

共 7 条

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