PEROXIDE ETCH CHEMISTRY ON -LESS-THAN-100-GREATER-THAN-IN0.53GA0.47AS

被引:29
作者
ASPNES, DE
STOCKER, HJ
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期
关键词
D O I
10.1116/1.571667
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:413 / 416
页数:4
相关论文
共 16 条
[1]   DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1057-1060
[2]   OPTICAL-PROPERTIES OF GAAS AND ITS ELECTROCHEMICALLY GROWN ANODIC OXIDE FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
SCHWARTZ, GP ;
GUALTIERI, GJ ;
STUDNA, AA ;
SCHWARTZ, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :590-597
[3]   CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED PHYSICS LETTERS, 1981, 39 (04) :316-318
[4]   HIGH PRECISION SCANNING ELLIPSOMETER [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED OPTICS, 1975, 14 (01) :220-228
[5]   INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE ;
THEETEN, JB .
PHYSICAL REVIEW B, 1979, 20 (08) :3292-3302
[6]   METHODS FOR DRIFT STABILIZATION AND PHOTOMULTIPLIER LINEARIZATION FOR PHOTOMETRIC ELLIPSOMETERS AND POLARIMETERS [J].
ASPNES, DE ;
STUDNA, AA .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (03) :291-297
[7]  
ASPNES DE, 1981, SPIE P, V276, P227
[8]  
ASPNES DE, 1977, OPTICAL POLARIMETRY, V112, P62
[9]   OPTICAL-PROPERTIES OF AMORPHOUS ARSENIC [J].
GREAVES, GN ;
DAVIS, EA ;
BORDAS, J .
PHILOSOPHICAL MAGAZINE, 1976, 34 (02) :265-290
[10]  
KERN W, 1978, RCA REV, V39, P278