MOBILITY OF HOLES IN THE QUATERNARY ALLOY IN1-XGAXASYP1-Y

被引：26

作者：

HAYES, JR ^{[1
]}

ADAMS, AR ^{[1
]}

GREENE, PD ^{[1
]}

机构：

[1] STAND TELECOMMUN LABS LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 08期

关键词：

D O I：

10.1049/el:19800206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：282 / 284

页数：3

共 9 条

[1]

ADAMS AV, UNPUBLISHED

[2] BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS [J].

GREENE, PD ;

WHEELER, SA ;

ADAMS, AR ;

ELSABBAHY, AN ;

AHMAD, CN .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :78-80

[3]

HAYES JP, UNPUBLISHED

[4] HOT-ELECTRON AND MAGNETO-TRANSPORT PROPERTIES OF IN1-XGAXP1-YASY LIQUID-PHASE EPITAXIAL-FILMS [J].

HOUSTON, B ;

RESTORFF, JB ;

ALLGAIER, RS ;

BURKE, JR ;

FERRY, DK ;

ANTYPAS, GA .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :91-94

[5] ALLOY SCATTERING AND HIGH-FIELD TRANSPORT IN TERNARY AND QUATERNARY 3-5 SEMICONDUCTORS [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH ;

FERRY, DK ;

HARRISON, JW .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :107-114

[6]

LITTLEJOHN MA, 1978, 7TH P INT S GAAS REL, P239

[7] EXPERIMENTAL-DETERMINATION OF THE EFFECTIVE MASSES FOR GAXIN1-XASYP1-Y ALLOYS GROWN ON INP [J].

NICHOLAS, RJ ;

PORTAL, JC ;

HOULBERT, C ;

PERRIER, P ;

PEARSALL, TP .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :492-494

[8]

PICKERING C, COMMUNICATION

[9]

Wiley J. D., 1975, SEMICONDUCT SEMIMET, V10, P91

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