LASER ACTION IN PHOTOPUMPED GAAS RIBBON WHISKERS

被引:11
作者
STONE, J
BURRUS, CA
CAMPBELL, JC
机构
[1] Bell Laboratories, Crawford Hill Laboratory, Holmdel, NJ 07733, United States
关键词
Compendex;
D O I
10.1063/1.328090
中图分类号
O59 [应用物理学];
学科分类号
摘要
Semiconducting gallium arsenide
引用
收藏
页码:3038 / 3041
页数:4
相关论文
共 19 条
[1]   WHISKER CRYSTALS OF GALLIUM ARSENIDE AND GALLIUM PHOSPHIDE GROWN BY VAPOR-LIQUID-SOLID MECHANISM [J].
BARNS, RL ;
ELLIS, WC .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) :2296-&
[2]  
BLUM FA, 1974, APPL PHYS LETT, V24, P430, DOI 10.1063/1.1655248
[3]   CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].
CASEY, HC ;
SELL, DD ;
WECHT, KW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257
[4]  
CRAFORD MG, 1976, OPTICAL PROPERTIES S, P187
[5]  
DERSIN HJ, 1964, Z METALLKD, V44, P536
[6]  
FROSCH CJ, 1967, P INT C CRYSTAL GROW, P305
[7]  
HILL DE, 1963, PHYS REV, V133, P866
[8]   LOW-THRESHOLD CONTINUOUS LASER OPERATION (300-337-DEGREES-K) OF MULTILAYER MO-CVD ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].
HOLONYAK, N ;
KOLBAS, RM ;
LAIDIG, WD ;
VOJAK, BA ;
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1978, 33 (08) :737-739
[9]   VAPOR-LIQUID-SOLID GROWTH OF GALLIUM PHOSPHIDE (WHISKERS 900 DEGREES C E) [J].
HOLONYAK, N ;
WOLFE, CM ;
MOORE, JS .
APPLIED PHYSICS LETTERS, 1965, 6 (04) :64-&
[10]   DEGRADATION CHARACTERISTICS OF CW OPTICALLY PUMPED ALXGA1-XAS HETEROSTRUCTURE LASERS [J].
JOHNSTON, WD ;
MILLER, BI .
APPLIED PHYSICS LETTERS, 1973, 23 (04) :192-194