STRUCTURE AND GROWTH OF THE INTERFACE OF PD ON A-SI-H

被引：17

作者：

NEMANICH, RJ ^{[1
]}

TSAI, CC ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.23.6828

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6828 / 6831

页数：4

共 14 条

[1] INTERFERENCE ENHANCED RAMAN-SCATTERING FROM VERY THIN ABSORBING FILMS
CONNELL, GAN
NEMANICH, RJ
TSAI, CC
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 31 - 33
[2] ELLIOTT RP, 1965, CONSTITUTION BINARY, P731
[3] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE
FREEOUF, JL
RUBLOFF, GW
HO, PS
KUAN, TS
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839
[4] POROSITY AND OXIDATION OF AMORPHOUS SILICON FILMS PREPARED BY EVAPORATION, SPUTTERING AND PLASMA-DEPOSITION
FRITZSCHE, H
TSAI, CC
[J]. SOLAR ENERGY MATERIALS, 1979, 1 (5-6): : 471 - 479
[5] XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE
GRUNTHANER, PJ
GRUNTHANER, FJ
MAYER, JW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 924 - 929
[6] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION
HO, PS
TAN, TY
LEWIS, JE
RUBLOFF, GW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1120 - 1124
[7] HYDROGEN IN AMORPHOUS-SEMICONDUCTORS
KNIGHTS, JC
LUCOVSKY, G
[J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1980, 9 (03): : 211 - 283
[8] Lau S. S., 1978, Thin films. Interdiffusion and reactions, P433
[9] INTERFERENCE-ENHANCED RAMAN-SCATTERING OF VERY THIN TITANIUM AND TITANIUM-OXIDE FILMS
NEMANICH, RJ
TSAI, CC
CONNELL, GAN
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (04) : 273 - 276
[10] REVIEW OF BINARY ALLOY FORMATION BY THIN-FILM INTERACTIONS
OTTAVIANI, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1112 - 1119

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