REVIEW OF BINARY ALLOY FORMATION BY THIN-FILM INTERACTIONS

[1] AGAJANIAN AH, 1974, TR221745 IBM TECH RE

[2] ANDERSON P, 1979, RC7543 IBM RES REP

[3] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[4] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 641 - 661

[5] BAGLIN J, 1978, APPL PHYS LETT, V33, P269

[6] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[7] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[8] PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (01) : 43 - 45

[9] FORMATION OF NI AND PT SILICIDE 1ST PHASE - DOMINANT ROLE OF REACTION-KINETICS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 187 - 190

[10] PHASE-DIAGRAMS AND METAL-RICH SILICIDE FORMATION [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 255 - 258

[1] AGAJANIAN AH, 1974, TR221745 IBM TECH RE

[2] ANDERSON P, 1979, RC7543 IBM RES REP

[3] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59

[4] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 641 - 661

[5] BAGLIN J, 1978, APPL PHYS LETT, V33, P269

[6] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[7] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[8] PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (01) : 43 - 45

[9] FORMATION OF NI AND PT SILICIDE 1ST PHASE - DOMINANT ROLE OF REACTION-KINETICS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 187 - 190

[10] PHASE-DIAGRAMS AND METAL-RICH SILICIDE FORMATION [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 255 - 258