HIGH-RESOLUTION FABRICATION OF SUB-MICRON STRUCTURES BY ION-BEAM LITHOGRAPHY

被引：8

作者：

MORIWAKI, K

ARITOME, H

NAMBA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 01期

关键词：

D O I：

10.7567/JJAPS.20S1.69

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：69 / 72

页数：4

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[2] ION-BEAM EXPOSURE OF RESIST MATERIALS
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[3] MORIWAKI K, 1979, 1979 P C MICR ENG MI, P153
[4] HIGH-INTENSITY SCANNING ION PROBE WITH SUBMICROMETER SPOT SIZE
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[J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 310 - 312