DEVICE QUALITY GROWTH AND CHARACTERIZATION OF (110) GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：53

作者：

ALLEN, LTP

WEBER, ER

WASHBURN, J

PAO, YC

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

[2] VARIAN ASSOCIATES,DIV 3-5,SANTA CLARA,CA 95054

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.98329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：670 / 672

页数：3

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