MEASUREMENTS OF DEEP LEVELS IN HIGH-PURITY MOLECULAR-BEAM EPITAXIAL GAAS

被引：23

作者：

DEJULE, RY

HAASE, MA

STILLMAN, GE

PALMATEER, SC

HWANG, JCM

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] GE,ELECTR LAB,SYRACUSE,NY 13221

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.334843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5287 / 5289

页数：3

共 11 条

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[8] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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