ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS

被引：148

作者：

CALAWA, AR

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 09期

关键词：

D O I：

10.1063/1.92484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：701 / 703

页数：3

共 8 条

[1] EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1978, 33 (12) :1020-1022

[2]

CALAWA AR, 1980, 1980 MOL BEAM EP WOR

[3] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J].

CHANDRA, A ;

WOOD, CEC ;

WOODARD, DW ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1979, 22 (07) :645-650

[4]

CHO AY, 1975, PROGR SOLID STATE CH, V10

[5] IDENTIFICATION OF SPECIES EVOLVED IN EVAPORATION OF III-V COMPOUNDS [J].

FOXON, CT ;

JOYCE, BA ;

FARROW, RFC ;

GRIFFITHS, RM .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) :2422-2435

[6] HIGH-PURITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBE [J].

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6413-6416

[7] CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

NEAVE, JH ;

BLOOD, P ;

JOYCE, BA .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :311-312

[8] MOLECULAR-BEAM EPITAXY OF GAAS AND INP WITH GAS SOURCES FOR ARSINE AND P [J].

PANISH, MB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2729-2733

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