CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY

被引：111

作者：

NEAVE, JH

BLOOD, P

JOYCE, BA

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 04期

关键词：

D O I：

10.1063/1.91474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：311 / 312

页数：2

共 9 条

[1] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J].

CHO, AY ;

HAYASHI, I .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4422-&

[2]

DONG WD, 1974, SURF SCI, V42, P609, DOI 10.1016/0039-6028(74)90045-4

[3] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1977, 64 (01) :293-304

[4] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1975, 50 (02) :434-450

[5] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LANG, DV ;

CHO, AY ;

GOSSARD, AC ;

ILEGEMS, M ;

WIEGMANN, W .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564

[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[7]

MARTIN GM, 1977, ELECTRON LETT, V13, P192

[8] TEMPERATURE-RANGE FOR GROWTH OF AUTO-EPITAXIAL GAAS FILMS BY MBE [J].

NEAVE, JH ;

JOYCE, BA .

JOURNAL OF CRYSTAL GROWTH, 1978, 43 (02) :204-208

[9]

NEAVE JH, 1978, J CRYST GROWTH, V44, P75

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