TEMPERATURE-RANGE FOR GROWTH OF AUTO-EPITAXIAL GAAS FILMS BY MBE

[1] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 545 - &

[2] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 655 - 662

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2841 - 2843

[5] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &

[6] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J]. SURFACE SCIENCE, 1975, 50 (02) : 434 - 450

[7] CHARACTERIZATION AND SUBSTRATE TEMPERATURE DEPENDENCE OF CRYSTALLINE STATE OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (07) : 935 - 942

[8] DIFFUSE-SCATTERING FROM CHEMISORPTION INDUCED SURFACE STEP DISTORTIONS - CO ON W (110) [J]. SURFACE SCIENCE, 1974, 46 (02) : 457 - 472

[9] GAAS, GAP, AND GAAS1-XPX FILMS DEPOSITED BY MOLECULAR-BEAM EPITAXY [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01): : 187 - 200

[10] NEAVE JH, UNPUBLISHED

[1] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 545 - &

[2] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 655 - 662

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2841 - 2843

[5] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &

[6] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J]. SURFACE SCIENCE, 1975, 50 (02) : 434 - 450

[7] CHARACTERIZATION AND SUBSTRATE TEMPERATURE DEPENDENCE OF CRYSTALLINE STATE OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (07) : 935 - 942

[8] DIFFUSE-SCATTERING FROM CHEMISORPTION INDUCED SURFACE STEP DISTORTIONS - CO ON W (110) [J]. SURFACE SCIENCE, 1974, 46 (02) : 457 - 472

[9] GAAS, GAP, AND GAAS1-XPX FILMS DEPOSITED BY MOLECULAR-BEAM EPITAXY [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01): : 187 - 200

[10] NEAVE JH, UNPUBLISHED