STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：177

作者：

LANG, DV ^{[1
]}

CHO, AY ^{[1
]}

GOSSARD, AC ^{[1
]}

ILEGEMS, M ^{[1
]}

WIEGMANN, W ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.322974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2558 / 2564

页数：7

共 19 条

[1]

ASAI S, 1973, J JAPAN SOC APPL P S, V42, P71

[2] APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS [J].

CASEY, HC ;

CHO, AY ;

BARNES, PA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :467-470

[3] GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

DUNN, CN ;

KUVAS, RL ;

SCHROEDER, WE .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :224-226

[4] FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES [J].

CHO, AY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :S31-&

[5] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS [J].

CHO, AY ;

HAYASHI, I .

SOLID-STATE ELECTRONICS, 1971, 14 (02) :125-&

[6] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :288-290

[7] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J].

CHO, AY ;

HAYASHI, I .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4422-&

[8] GAAS MESFET PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY ;

CHEN, DR .

APPLIED PHYSICS LETTERS, 1976, 28 (01) :30-31

[9] INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS - GAAS VOLTAGE VARACTOR [J].

CHO, AY ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1812-1817

[10]

CHO AY, 1971, J APPL PHYS, V42, P2075

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