INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS - GAAS VOLTAGE VARACTOR

被引：88

作者：

CHO, AY ^{[1
]}

REINHART, FK ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.1663495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1812 / 1817

页数：6

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