MOLECULAR-BEAM EPITAXY OF GAAS AND INP WITH GAS SOURCES FOR ARSINE AND P

被引:149
作者
PANISH, MB
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关键词
D O I
10.1149/1.2129580
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2729 / 2733
页数:5
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