EVALUATION OF DOPING PROFILES FROM CAPACITANCE MEASUREMENTS

被引：62

作者：

VANOPDORP, C

机构：

[1] Philips Research Laboratories, N.V. Philips' Gloeilampenfabriken, Eindhoven

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 04期

关键词：

D O I：

10.1016/0038-1101(68)90020-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Approximate CV curves are calculated for a number of typical doping profiles near a semiconductor p-n junction. These calculated curves can be used for the evaluation of doping profiles from experimentally determined CV curves. This evaluation of doping profiles from measured CV curves alone is never unambiguous. It is shown that it is often possible to reach a decision regarding the real profile, if additional information concerning the semiconductor material and the process of preparation of the junction is available. © 1968.

引用

页码：397 / +

页数：1

共 9 条

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[8] VANOPDORP C, TO BE PUBLISHED
[9] ZWIJSEN W, UNPUBLISHED

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