DC AND MICROWAVE PERFORMANCE OF OMVPE-GROWN ALLNAS/INP HEMTS

被引：5

作者：

AINA, L

SERIO, M

MATTINGLY, M

HEMPFLING, E

CHIEN, H

机构：

[1] Allied-Signal Aerospace Company, Aerospace Technology Center, Columbia, 9140 Old Annapolis Road

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 22期

关键词：

devices and materials; Microwave devices and components; Semiconductor;

D O I：

10.1049/el:19901231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AIInAs/InP HEMTs with extrinsic transconductances of 267mS/mm at 300 K and 342mS/mm at 77 K are reported. The corresponding intrinsic transconductance at 300 K is estimated to be 615mS/mm. These 0.80μm gate length devices also exhibit high microwave gains with fmax as high as 65 GHz and fT of 22 GHz. These are some of the best results reported for InP channel devices. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1912 / 1913

页数：2