NOVEL AIINAS/INP HEMT

被引：9

作者：

AINA, O

SERIO, M

MATTINGLY, M

HEMPFLING, E

机构：

[1] Allied-Signal Aerospace Company, Aerospace Technology Center, 9140 Old Annapolis Road

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 10期

关键词：

Amplifiers; Semiconductor devices and materials;

D O I：

10.1049/el:19900426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of the first AlInAs/InP HEMT is reported. This device has extrinsic transconductance of 40mS/mm, gate-drain and drain-source breakdown voltages of 20 V and saturation drain current densities of 0-1 A/mm of gate width. These preliminary results show the potential of the AlInAs/InP heterojunctions for a wide variety of application including microwave power HEMTs. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：651 / 652

页数：2

共 4 条

[1]

AINA O, 1988, J CRYST GROWTH, V93, P911

[2] MICROWAVE AND DC CHARACTERIZATION OF INP/GAINAS HETEROSTRUCTURE INSULATED-GATE FETS EMPLOYING AIINAS AS GATE INSULATOR [J].