HIGH-PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMTS

The performance of long (1. 3- mu m) and short (0. 3- mu m) gate-length Al//0//. //4//8In//0//. //5//2 As-Ga//0//. //4//7In//0//. //5//3 high-electron-mobility transistors (HEMTs) is reported. Transconductances of 465 and 650 mS/mm, respectively, were achieved. The 0. 3- mu m-long gate-length device exhibited an f//t greater than 80 GHz. These results are attributed to the excellent electronic properties of the AlInAs-GaInAs modulation-doped system.