DC AND MICROWAVE CHARACTERISTICS OF AN IN0.53GA0.47AS/IN0.52AL0.48AS MODULATION-DOPED QUASI-MISFET

被引：11

作者：

SEO, KS ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

GLEASON, KR ^{[1
]}

机构：

[1] CASCADE MICROTECH INC,BEAVERTON,OR 97075

来源：

关键词：

D O I：

10.1049/el:19870189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：259 / 260

页数：2

共 6 条

[1] HIROSE K, 1986, 12TH P INT S GAAS RE, P529
[2] EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
ISHIBASHI, T
SUGETA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L635 - L637
[3] ITOH T, 1986, 12TH P INT S GAAS RE, P571
[4] KAMADA M, 1986, 13TH INT S GAAS RELA
[5] MICROWAVE PERFORMANCE OF INALAS/INGAAS/INP MODFETS
PENG, CK
AKSUN, MI
KETTERSON, AA
MORKOC, H
GLEASON, KR
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) : 24 - 26
[6] Seo K. S., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P321