EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：19

作者：

ITO, H

ISHIBASHI, T

SUGETA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.L635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L635 / L637

页数：3

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共 6 条

[1] ALLOYED OHMIC CONTACTS TO GAAS
BRASLAU, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807
[2] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS
CHRISTOU, A
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 141 - &
[3] OHMIC CONTACTS FOR GAAS DEVICES
COX, RH
STRACK, H
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +
[4] HIGH-FREQUENCY CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
ISHIBASHI, T
SUGETA, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 214 - 216
[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
KROEMER, H
[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25
[6] MACKEY HM, 1977, I PHYS C SER B, V33, P254