HIGH-FREQUENCY CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

[1] HIGH-SPEED GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH NEAR-BALLISTIC OPERATION [J]. ELECTRONICS LETTERS, 1983, 19 (04) : 147 - 149

[2] Ankri D., 1982, International Electron Devices Meeting. Technical Digest

[3] NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 403 - 406

[4] Ito H., UNPUB

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[6] (GAAL)AS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH GRADED COMPOSITION IN THE BASE [J]. ELECTRONICS LETTERS, 1983, 19 (10) : 367 - 368

[1] HIGH-SPEED GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH NEAR-BALLISTIC OPERATION [J]. ELECTRONICS LETTERS, 1983, 19 (04) : 147 - 149

[2] Ankri D., 1982, International Electron Devices Meeting. Technical Digest

[3] NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 403 - 406

[4] Ito H., UNPUB

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[6] (GAAL)AS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH GRADED COMPOSITION IN THE BASE [J]. ELECTRONICS LETTERS, 1983, 19 (10) : 367 - 368