NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：42

作者：

ASBECK, PM

MILLER, DL

ASATOURIAN, R

KIRKPATRICK, CG

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 12期

关键词：

D O I：

10.1109/EDL.1982.25615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：403 / 406

页数：4

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