DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-FREQUENCY OPERATION

被引：33

作者：

ANKRI, D

SCAVENNEC, A

BESOMBES, C

COURBET, C

HELIOT, F

RIOU, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.93271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：816 / 818

页数：3

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