GAALAS-GAAS HETEROJUNCTION MICROWAVE BIPOLAR-TRANSISTOR

被引：15

作者：

BENEKING, H

SU, LM

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 08期

关键词：

D O I：

10.1049/el:19810211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：301 / 302

页数：2

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[3] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION
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RIDEOUT, VL
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1339 - +
[4] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS
KROEMER, H
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537