DESIGN AND FABRICATION OF HIGH-SPEED GAAIAS-GAAS HETEROJUNCTION TRANSISTORS

被引：27

作者：

BAILBE, JP

MARTY, A

HIEP, PH

REY, GE

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/T-ED.1980.20000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1160 / 1164

页数：5

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