AL0.5GA0.5AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：54

作者：

MILANO, RA

WINDHORN, TH

ANDERSON, ER

STILLMAN, GE

DUPUIS, RD

DAPKUS, PD

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] ROCKWELL INT,ELECTR RES CTR,DIV ELECTR DEVICES,ANAHEIM,CA 92803

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 09期

关键词：

D O I：

10.1063/1.90867

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al0.5Ga0.5As/GaAs heterojunction phototransistors have been fabricated from structures grown by the MO-CVD process. The relatively high optical gains (∼100) and short response times (≲2 nsec) obtained with these devices indicate that an optimized AlxGa 1-xAs/GaAs heterostructure phototransistor could be a suitable detector for optical-fiber-communication systems using GaAs DH lasers.

引用

页码：562 / 564

页数：3

共 14 条

[1] ALFEROV ZI, 1973, SOV PHYS SEMICOND+, V7, P780
[2] HIGH-GAIN WIDE-GAP-EMITTER GA1-XALXAS-GAAS PHOTOTRANSISTOR
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[4] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468
[5] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 406 - 407
[6] ABRUPT GA1-XALXAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 335 - 337
[7] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 839 - 841
[8] VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 473 - 475
[9] LOW-THRESHOLD CONTINUOUS LASER OPERATION (300-337-DEGREES-K) OF MULTILAYER MO-CVD ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES
HOLONYAK, N
KOLBAS, RM
LAIDIG, WD
VOJAK, BA
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 737 - 739
[10] (GAAL)AS-GAAS HETEROJUNCTION TRANSISTORS WITH HIGH INJECTION EFFICIENCY
KONAGAI, M
TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2120 - 2124

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