CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：53

作者：

DUPUIS, RD

DAPKUS, PD

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 07期

关键词：

D O I：

10.1063/1.90085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：406 / 407

页数：2

共 11 条

[1]

Alferov Zh. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1826

[2]

ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1573

[3] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

DIXON, RW ;

CASEY, HC ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :501-503

[4]

Dupuis R. D., 1977, 1977 International Electron Devices Meeting, P575, DOI 10.1109/IEDM.1977.189324

[5] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

YINGLING, RD ;

MOUDY, LA .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :201-203

[6] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1977, 31 (12) :839-841

[7]

DUPUIS RD, 1977, APPL PHYSICS LETTERS, V31, P468

[8]

DUPUIS RD, UNPUBLISHED

[9] CONTINUOUSLY OPERATED (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS WITH 70-DEGREES-C LIFETIMES AS LONG AS 2 YEARS [J].

HARTMAN, RL ;

SCHUMAKER, NE ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :756-759

[10] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J].

HAYASHI, I ;

PANISH, MB ;

FOY, PW ;

SUMSKI, S .

APPLIED PHYSICS LETTERS, 1970, 17 (03) :109-&

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