ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：134

作者：

DUPUIS, RD ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 07期

关键词：

D O I：

10.1063/1.89743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：466 / 468

页数：3

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