DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE

被引：114

作者：

BASS, SJ ^{[1
]}

机构：

[1] SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 31卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(75)90127-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：172 / 178

页数：7

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