USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS

The decomposition of alkylgallium compounds (R//3Ga), e. g. , trimethylgallium or triethylgallium, in the presence of arsine, phosphine, arsine-phosphine, or arsine- stibine has produced single-crystal growth of the corresponding Ga- V compounds on single-crystal insulating substrates as well as on GaAs, GaP and/or Ge. This technique obviates the use of multiple temperature zones for the CVD process, simplifies the procedure considerably, and makes compound semiconductor film growth compatible with the growth of elemental semiconductors, such as Si and Ge. This compatibilityhas made it possible to fabricate and study, via, CVD and appropriate masking techniques, various combinations of single- crystal compound and elemental semiconductor layers on the same insulating substrate.