(GAAL)AS-GAAS HETEROJUNCTION TRANSISTORS WITH HIGH INJECTION EFFICIENCY

被引：33

作者：

KONAGAI, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT ELECT,MEGURO,TOKYO,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.321850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2120 / 2124

页数：5

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