(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH GRADED COMPOSITION IN THE BASE

[1] Ankri D., 1982, International Electron Devices Meeting. Technical Digest

[2] Asbeck P. M., 1981, International Electron Devices Meeting, P629

[3] NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 403 - 406

[4] ASBECK PM, 1983, UNPUB ELECTRON DEV L, V4

[5] NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 93 - 95

[6] Kroemer H., 1957, RCA REV, V18, P332

[7] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 781 - 787

[1] Ankri D., 1982, International Electron Devices Meeting. Technical Digest

[2] Asbeck P. M., 1981, International Electron Devices Meeting, P629

[3] NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 403 - 406

[4] ASBECK PM, 1983, UNPUB ELECTRON DEV L, V4

[5] NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 93 - 95

[6] Kroemer H., 1957, RCA REV, V18, P332

[7] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 781 - 787