EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY

被引：141

作者：

TSANG, WT

SCHUBERT, EF

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 04期

关键词：

D O I：

10.1063/1.97177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：220 / 222

页数：3

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