PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：41

作者：

MARSH, JH

ROBERTS, JS

CLAXTON, PA

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 12期

关键词：

D O I：

10.1063/1.95744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1161 / 1163

页数：3

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[1] PSEUDO-QUATERNARY GAINASP SEMICONDUCTORS - A NEW GA0.47IN0.53AS/INP GRADED GAP SUPERLATTICE AND ITS APPLICATIONS TO AVALANCHE PHOTODIODES [J].

CAPASSO, F ;

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OLSSON, NA ;

HUMMEL, SG .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1193-1195

[2] AN N-IN0.53GA0.47AS-N-INP RECTIFIER [J].

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KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5838-5842

[3] PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KAWAI, H ;

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JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :463-467

[4] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

HIRTZ, JP ;

ZIEMELIS, UO ;

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ETIENNE, B ;

VOOS, M .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :585-587

[5] HOMOEPITAXIAL MOLECULAR-BEAM GROWTH OF INP ON THERMALLY CLEANED (100) ORIENTED SUBSTRATES [J].

ROBERTS, JS ;

DAWSON, P ;

SCOTT, GB .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :905-907

[6] GA0.47IN0.53AS/INP MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY OPERATING AT 1.53 MU-M [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :288-290